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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA747 DESCRIPTION *With TO-3 package *Wide area of safe operation *Complement to type 2SC1116 APPLICATIONS *For audio and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -120 -120 -6 -10 -4 100 150 -65~150 UNIT V V V A A W PC Tj Tstg Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-50mA ;IB=0 IE=-1mA ;IC=0 IC=-5A; IB=-0.5A IC=-5A; IB=-0.5A VCB=-120V; IE=0 VEB=-6V; IC=0 IC=-3A ; VCE=-4V IC=-0.5A ; VCE=-12V 30 15 MIN -120 -6 TYP. 2SA747 MAX UNIT V V -2.0 -2.5 -0.1 -1.0 V V mA mA MHz Switching times tr tstg tf Rise time Storage time Fall time VCC=-12V;RL=4;IC=-3A IB1=-200mA,IB2=50mA 1.2 3.3 0.8 s s s 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA747 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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